Tag Archives: Tuskegee University

CIAN Student Webinar Talk Series – Jean-Pierre Papouloute, Tuskegee University

Ge/Si Device Technology for Photonics Integration

Date: Friday, November 21, 2014
Time: 1:30pm Pacific Time
Look up your time zone here.

Login to the Webinar here*

Jean-PierreBiography

Jean-Pierre Papouloute
Undergraduate Student
Electrical Engineering
Tuskeegee University

Jean-Pierre Papouloute is currently working toward a B.Sc. in Electrical Engineering at Tuskegee University. Since September 2013, he has been working under Dr. Korivi on the  development of monolithically integrated high sensitivity Ge/Si hetero-junction field effect transistor (HJFET) photodetector for Si optoelectronic chip. His research experience is focused on fabricating and testing a silicon waveguide, and fabricating an isolated Si/Ge HJFET.

Abstract

The overall research goal is to realize a fully integrated germanium (Ge)/silicon (Si) hetero-junction field effect transistor (HJFET) detector device. An integrated silicon waveguide connects the HJFET device to an optical fiber that brings in light from an external source. The proposed Ge/Si HJFET is based on a modified Ge/Si p-n junction photodiode. It has a metal semiconductor field effect transistor (MESFET) type structure. It is fabricated on a silicon-on-insulator (SOI) substrate, with a n-Si channel on the active Si layer. The gate is an island of Ge. Aluminum (Al) patterns form the ohmic source and drain contacts. The buried oxide (BOX) layer separates the active Si layer from the bulk Si layer or Si handle. When light is incident on the Ge gate island, electron-hole pairs are generated at the gate creating a channel between the source and drain. When a drain voltage is applied, photocurrent flows through the external circuit.

Login to the Webinar here*

If you missed Jean-Pierre Papouloutes’s talk, see it below!

*link will not work until date & time of webinar

CIAN-wide Perfect Pitch Winner

Congratulations to Atiyah Ahsan of Columbia University!

The National Science Foundation’s Perfect Pitch competition invites students from Engineering Research Centers around the nation to compete at the NSF Biennial Meeting. Essentially an elevator pitch, competitors must put forward a proposal dealing with their ERC’s research topics and the importance of their own research to its goals.

CIAN recently held an internal Perfect Pitch competition where CIAN faculty judges select the student to represent CIAN at the NSF Biennial Meeting in Arlington, VA. Students from Columbia, the University of Arizona, University of California San Diego, and Tuskegee University competed. The CIAN judges have selected Atiyah Ahsan of Columbia University to represent CIAN at the NSF Biennial Meeting.

CIAN-wide Perfect Pitch Winner

atiyah-ahsan

Atiyah Ahsan – Columbia University

Atiyah responded to her success in the CIAN-wide competition with the following statement:

“Having been a CIAN student for the past 4 years, I have had the opportunity to participate in various Innovation to Market workshops and a entrepreneurship class at Columbia Business School. I am looking forward to applying the knowledge from these experiences and representing CIAN nationally at the NSF Perfect Pitch competition.”

CIAN-wide competition participants
Continue reading