Ge/Si Device Technology for Photonics Integration
Date: Friday, November 21, 2014
Time: 1:30pm Pacific Time
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Jean-Pierre Papouloute is currently working toward a B.Sc. in Electrical Engineering at Tuskegee University. Since September 2013, he has been working under Dr. Korivi on the development of monolithically integrated high sensitivity Ge/Si hetero-junction field effect transistor (HJFET) photodetector for Si optoelectronic chip. His research experience is focused on fabricating and testing a silicon waveguide, and fabricating an isolated Si/Ge HJFET.
The overall research goal is to realize a fully integrated germanium (Ge)/silicon (Si) hetero-junction field effect transistor (HJFET) detector device. An integrated silicon waveguide connects the HJFET device to an optical fiber that brings in light from an external source. The proposed Ge/Si HJFET is based on a modified Ge/Si p-n junction photodiode. It has a metal semiconductor field effect transistor (MESFET) type structure. It is fabricated on a silicon-on-insulator (SOI) substrate, with a n-Si channel on the active Si layer. The gate is an island of Ge. Aluminum (Al) patterns form the ohmic source and drain contacts. The buried oxide (BOX) layer separates the active Si layer from the bulk Si layer or Si handle. When light is incident on the Ge gate island, electron-hole pairs are generated at the gate creating a channel between the source and drain. When a drain voltage is applied, photocurrent flows through the external circuit.